| PART |
Description |
Maker |
| AS8F512K32Q-90/CT AS8F512K32Q-90/IT AS8F512K32Q-90 |
128K x 32 SRAM SRAM MEMORY ARRAY 128K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CPGA66
128K x 32 SRAM SRAM MEMORY ARRAY 128K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CQFP68
128K x 32 SRAM SRAM MEMORY ARRAY 128K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CQFP68
512K x 32 FLASH FLASH MEMORY ARRAY 512K X 32 FLASH 5V PROM MODULE, 90 ns, CQFP68
512K x 32 FLASH FLASH MEMORY ARRAY 512K X 32 FLASH 5V PROM MODULE, 120 ns, CQFP68
128K x 32 SRAM SRAM MEMORY ARRAY 128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68
128K x 32 SRAM SRAM MEMORY ARRAY 128K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68
|
Austin Semiconductor, Inc
|
| MT5C1001DCJ-XT MT5C1001F-883C MT5C1001C-IT MT5C100 |
1 meg x 4 SRAM memory array
1M x 1 SRAM SRAM MEMORY ARRAY
|
Austin Semiconductor
ASI
Electronic Theatre Controls, Inc.
|
| AS8S512K32P-17L/Q AS8S512K32P-17L/XT AS8S512K32P-1 |
512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68
512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CPGA66
512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 25 ns, CPGA66
512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 12 ns, CPGA66
512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 12 ns, CQFP68
512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CQFP68
512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 45 ns, CPGA66
512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CPGA66
|
Austin Semiconductor, Inc
|
| HM66AEB18202 HM66AEB36102BP-40 HM66AEB18202BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| CY7C1483V33-100BGC CY7C1483V33-117BGC CY7C1483V33- |
IC, SDRAM, 64M BIT, 512KX4X32 BIT,3.3V,10NS,100MHZ,TSOP-86
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 7.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 CACHE SRAM, 6.5 ns, PBGA209
2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 STANDARD SRAM, 7.5 ns, PBGA209
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 7.5 ns, PBGA165
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 6.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 2M X 36 STANDARD SRAM, 8.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 8.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 STANDARD SRAM, 5.5 ns, PBGA209
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| LRS1342 |
Stacked Chip 16M Flash Memory and 2M SRAM 堆叠芯片1,600快闪记忆体以2M SRAM
|
Sharp, Corp.
|
| HM62L36256BP-33 HM62L36256BP-28 |
Memory>Fast SRAM>Late Write / High Speed Interface Synchronous SRAM
|
Renesas
|
| M5M5V5A36GP-85 M5M5V5A36GP M5M5V5A36GP-75 |
Memory>Fast SRAM>Network SRAM
18874368-BIT(524288-WORD BY 36-BIT) Flow-Through NETWORK SRAM
|
RENESAS[Renesas Electronics Corporation]
|
| MT5C2565C-20/883C MT5C2565EC-55/883C MT5C2565C-55/ |
64K x 4 SRAM MEMORY ARRAY
64K x 4 SRAM MEMORY ARRAY
|
Electronic Theatre Controls, Inc.
Austin Semiconductor
http://
|
| CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
|
